School of Nuclear Science and Technology

Zhang Limin

2018-12-04

Print Close

Name：Limin Zhang

Position：Associate Professor

Institute：Institute of Radiation Physics and Nuclear Materials

Address：Donggang West Road 199, Lanzhou, Gansu,730000, China

E-mail：zhanglm@lzu.edu.cn

Research Focus：

1.Radiation damage in nuclear energy materials (SiC, ceramic in glasses, etc.).

2.Ion implantation-induced modification in nitride materials (GaN, InGaN, AlGaN, etc.).

Education：

1.2003/09-2008/06, School of Nuclear Science and Technology, Lanzhou University, Ph.D. in Physics (Particle Physics and Nuclear Physics).

2.1999/09-2003/06, School of Physical Science and Technology, B.S. in Physics (Electronic Devices and Material Engineering).

Work Experience：

1.2012/05-Present, Associate Professor, School of Nuclear Science and Technology, Lanzhou University.

2.2014/06-2015/05，Visiting scholar, Pacific Northwest National Laboratory.

3.2008/07-2012/05, Lecturer, School of Nuclear Science and Technology, Lanzhou University.

4.2009/12-2012/03，Part-time Post-doctoral Fellow, Institute of Modern Physics, Chinese Academy of Sciences.

Giving Courses：Introduction to Nuclear Engineering (for undergraduate students).

Publications：

1.Limin Zhang^*, Weilin Jiang^*, Wensi Ai, Liang Chen, Chenlong Pan, Tieshan Wang, Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures, J. Am. Ceram. Soc. 2018, http://doi.org/10.1111/jace.15895.

2.W.S. Ai, L.M. Zhang^*, W. Jiang, T.S. Wang, Raman study of In_xGa_1-xN (x=0.32-0.9) films irradiated with Xe ions at room temperature and 773 K, Nucl. Instrum. Methods B, 2018, 415:48-53.

3.Limin Zhang^*, Weilin Jiang^*, Wensi Ai, Liang Chen, Tieshan Wang, Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures, J. Nucl. Mater. 2018, 505:249-254.

4.L.M. Zhang^*, W. Jiang, R.C. Fadanelli, W.S. Ai, J.X. Peng, T.S. Wang, C.H. Zhang, Microstructural response of InGaN to swift heavy ion irradiation, Nucl. Instrum. Methods B, 2016, 388:30-34.

5.Limin Zhang^*, Weilin Jiang, Amila Dissanayake, Jinxin Peng, Wensi Ai, Jiandong Zhang, Zihua Zhu, Tieshan Wang, Vaithiyalingam Shutthanandan, Lattice damage and compositional changes in Xe ion irradiated In_xGa_1-xN (x =0.32？1.0) single crystals, J. Appl. Phys, 2016, 199: 244704.

6.Limin Zhang^*, Weilin Jiang^*, Amila Dissanayake, Tamas Varga, Jiandong Zhang, Zihua Zhu, Dehong Hu, Haiyan Wang, Charles H Henager Jr, Tieshan Wang, Grain growth of nanocrystalline 3C-SiC under Au ion irradiaton at elevated temperatures, J. Phys. D: Appl. Phys., 2016, 49: 035304.

7.L.M. Zhang^*, R.C. Fadanelli, P. Hu, J.T. Zhao, T.S. Wang, C.H. Zhang, Structural damage in InGaN induced by MeV heavy ion irradiation, Nucl. Instrum. Methods B, 2015, 356-357: 53-56.

8.L.M. Zhang^*, C.X. Li, J.T. Zhao, K.J. Yang, G.F. Zhang, T.S. Wang, C.H. Zhang, Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi³³⁺ ions, Nucl. Instrum. Methods B, 2013, 305: 1-4.

9.L.M. Zhang^*, C.H. Zhang, C.X. Li, Y. Song, Y.F. Jin, T.S. Wang, Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations, Eur. Phys. J. Appl. Phys., 2012, 59:30101.

10.L.M. Zhang, C.H. Zhang^*, L.Q. Zhang, X. J. Jia, T.D. Ma, Y. Song, Y.T. Yang, B.S. Li, Y.F. Jin, Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions, Nucl. Instrum. Methods B, 2011, 269: 1782-1785.

11.L.M. Zhang, C.H. Zhang^*, L.Q. Zhang, X. J. Jia, L.H. Han, C.L. Xu, Y. Zhang, Y.F. Jin, HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions, Nucl. Instrum. Methods B, 2011, 269: 1063-1066.

Zhang Limin

Link